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ICT-110ICT-117Theory3 credits · L3

Semiconductor Engineering and its applications

Offered in Semester 2, Semester 1 for CSE, IT, ECE, CSE-AI, CSE-DS · Prerequisites: None

01Syllabus (unit-wise)

Official topics from the 2025-26 syllabus, unit by unit.

IUnit I

Crystal lattices, unit cells, Miller indices, crystal directions, energy levels and energy bands, direct and indirect bandgap materials, semiconductor materials (Si, Ge, GaAs), intrinsic and extrinsic semiconductors, carrier concentration, Fermi energy, density of states, drift and diffusion of carriers, mobility, conductivity and resistivity, carrier generation and recombination, Einstein relation

IIUnit II

PN junction formation, equilibrium conditions, built-in potential, depletion region, Poisson's equation, carrier injection and current flow under bias, I-V characteristics, junction capacitance, temperature effects, Zener and avalanche breakdown, diode models and approximations, switching behavior, small signal analysis, real diode characteristics, metal-semiconductor contacts (ohmic and Schottky), Schottky diode, tunneling process, tunnel diodes.

IIIUnit III

Bipolar junction transistor structure, modes of operation, current components, configurations and I-V characteristics, large signal current gains, Early effect, JFET structure and operation, MOSFET types (enhancement and depletion), MOSFET I-V characteristics, light-matter interaction in semiconductors, LEDs and photodiodes, photoconductivity, solar cells, phototransistors, laser diodes (introductory), PIN and avalanche photodiodes, applications in sensors and communication systems

IVUnit IV

Overview of IC fabrication, crystal growth and wafer preparation, oxidation, diffusion, ion implantation, photolithography, etching, metallization, cleanroom protocols, device modeling basics, continuity equation, drift-diffusion model, small-signal and large-signal models for PN junctions and optoelectronic devices, introduction to TCAD simulation tools (conceptual overview only)

02Marking scheme

How this paper is evaluated

1. Teachers Continuous Evaluation: 40 marks 2. Term-End Semester Examinations: 60 Marks

03Course outcomes

What you should be able to do after this course

CO1

Understand the semiconductor material

CO2

Understand different types of diodes and their properties

CO3

Understand Bipolar Junction transistor structures and their properties

CO4

Understand IC fabrication techniques

04Books

Prescribed textbooks and references

Textbooks

  1. 01Semiconductor Physics and Devices, Donald A. Neamen, McGraw-Hill, Latest Edition.
  2. 02Solid State Electronic Devices, Ben G. Streetman and Sanjay Banerjee, Pearson Education, Latest
  3. 03Edition.

References

  1. 01Fundamentals of Semiconductor Devices, Anderson and Anderson, McGraw-Hill, Latest Edition.
  2. 02Physics of Semiconductor Devices, S.M. Sze and Kwok K. Ng, Wiley-Interscience, Latest Edition.
  3. 03Semiconductor Device Fundamentals, Robert F. Pierret, Addison-Wesley, Latest Edition.
  4. 04Introduction to Microelectronic Fabrication, Richard C. Jaeger, Prentice Hall, Latest Edition.
  5. 05Electronic Devices and Circuit Theory, Robert L. Boylestad and Louis Nashelsky, Pearson Education,
  6. 06Latest Edition.

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